BAT74_3 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 2 of 10
NXP Semiconductors
BAT74
Schottky barrier double diode
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Series connection.
[2] If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one
diode is in reverse operation and the other is in forward operation at the same moment, total device current
is max. 200 mA.
Table 3. Ordering information
Type number
Package
Name
Description
Version
BAT74 - plastic surface-mounted package; 4 leads SOT143B
Table 4. Marking codes
Type number
Marking code[1]
BAT74 *L4
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
reverse voltage - 30 V
IF
forward current - 200 mA
IFRM
repetitive peak forward
current
tp
≤
1s; δ≤0.5 - 300 mA
IFSM
non-repetitive peak forward
tp
<10ms - 600 mA
current
Ptot
total power dissipation Tamb
≤
25
°C-230mW
Tj
junction temperature - 125
°C
Tamb
ambient temperature
?65 +125
°C
Tstg
storage temperature
?65 +150
°C
Double diode operation
VR
reverse voltage - 30 V
[1]
-60V
IF
forward current
[2]
-110mA
IFRM
repetitive peak forward
current
tp
≤
1s; δ≤0.5 - 200 mA
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